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| PROFET(R) BTS 432 F2 Smart Highside Power Switch Features * Load dump and reverse battery protection1) * Clamp of negative voltage at output * Short-circuit protection * Current limitation * Thermal shutdown * Diagnostic feedback * Open load detection in ON-state * CMOS compatible input * Electrostatic discharge (ESD) protection * Loss of ground and loss of Vbb protection2) * Overvoltage protection * Undervoltage and overvoltage shutdown with autorestart and hysteresis Product Summary VLoad dump 80 Vbb-VOUT Avalanche Clamp 58 Vbb (operation) 4.5 ... 42 Vbb (reverse) -32 RON 38 IL(SCp) 21 IL(SCr) 10 IL(ISO) 11 V V V V m A A A 5 5 Application 5 * C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads * Most suitable for inductive loads * Replaces electromechanical relays and discrete circuits 1 Straight leads 1 SMD Standard General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS(R) chip on chip technology. Fully protected by embedded protection functions. R bb + V bb 3 Voltage source Overvoltage protection Current limit Gate protection V Logic Voltage sensor Charge pump Level shifter Rectifier Open load ESD Logic detection Limit for unclamped ind. loads OUT 2 IN Temperature sensor 5 Load 4 ST Short circuit detection GND (R) PROFET Load GND 1 Signal GND 1) 2) No external components required, reverse load current limited by connected load. Additional external diode required for charged inductive loads Semiconductor Group Page 1 of 14 1999-Mar.-22 BTS 432 F2 Pin 1 2 3 4 5 Symbol GND IN Vbb ST OUT (Load, L) I + S O Function Logic ground Input, activates the power switch in case of logical high signal Positive power supply voltage, the tab is shorted to this pin Diagnostic feedback, low on failure Output to the load Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 3) Load dump protection VLoadDump = UA + Vs, UA = 13.5 V RI= 2 , RL= 1.1 , td= 200 ms, IN= low or high Load current (Short-circuit current, see page 4) Operating temperature range Storage temperature range Power dissipation (DC) Inductive load switch-off energy dissipation, single pulse Tj=150 C: Electrostatic discharge capability (ESD) (Human Body Model) Input voltage (DC) Current through input pin (DC) Current through status pin (DC) see internal circuit diagrams page 6... Symbol Vbb Vs3) Values 63 66.5 self-limited -40 ...+150 -55 ...+150 125 1.7 2.0 -0.5 ... +6 5.0 5.0 1 75 tbd Unit V V A C W J kV V mA IL Tj Tstg Ptot EAS VESD VIN IIN IST Thermal resistance chip - case: junction - ambient (free air): SMD version, device on pcb 4): RthJC RthJA K/W 3) 4) VS is setup without DUT connected to the generator per ISO 7637-1 and DIN 40839 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical without blown air. Semiconductor Group Page 2 1999-Mar.-22 BTS 432 F2 Electrical Characteristics Parameter and Conditions at Tj = 25 C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Load Switching Capabilities and Characteristics On-state resistance (pin 3 to 5) IL = 2 A Nominal load current (pin 3 to 5) ISO Proposal: VON = 0.5 V, TC = 85 C Output current (pin 5) while GND disconnected or GND pulled up, VIN= 0, see diagram page 7, Tj =-40...+150C Turn-on time to 90% VOUT: Turn-off time to 10% VOUT: RL = 12 , Tj =-40...+150C Slew rate on 10 to 30% VOUT, RL = 12 , Tj =-40...+150C Slew rate off 70 to 40% VOUT, RL = 12 , Tj =-40...+150C Tj=25 C: RON Tj=150 C: IL(ISO) IL(GNDhigh) -9 -- 30 55 11 -- 38 70 -1 m A mA s ton toff dV /dton -dV/dtoff 50 10 0.4 1 160 ---- 300 80 2.5 5 V/s V/s Operating Parameters Operating voltage 5) Tj =-40...+150C: Undervoltage shutdown Tj =-40...+150C: Undervoltage restart Tj =-40...+150C: Undervoltage restart of charge pump see diagram page 12 Tj =-40...+150C: Undervoltage hysteresis Vbb(under) = Vbb(u rst) - Vbb(under) Overvoltage shutdown Tj =-40...+150C: Overvoltage restart Tj =-40...+150C: Overvoltage hysteresis Tj =-40...+150C: 6) Overvoltage protection Tj =-40C: Ibb=40 mA Tj =25...+150C: Standby current (pin 3) Tj=-40...+25C: VIN=0 Tj=150C: Leakage output current (included in Ibb(off)) VIN=0 Operating current (Pin 1) 7), VIN=5 V Vbb(on) Vbb(under) Vbb(u rst) Vbb(ucp) Vbb(under) 4.5 2.4 ---42 42 -60 63 ----- ---6.5 0.2 --0.2 -67 12 18 6 1.1 42 4.5 4.5 7.5 -52 ---25 60 --- V V V V V V V V V A A mA Vbb(over) Vbb(o rst) Vbb(over) Vbb(AZ) Ibb(off) IL(off) IGND 5) 6) 7) At supply voltage increase up to Vbb= 6.5 V typ without charge pump, VOUT Vbb - 2 V see also VON(CL) in table of protection functions and circuit diagram page 7. Meassured without load. Add IST, if IST > 0, add IIN, if VIN>5.5 V Semiconductor Group Page 3 1999-Mar.-22 BTS 432 F2 Parameter and Conditions at Tj = 25 C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Protection Functions Initial peak short circuit current limit (pin 3 to 5) 8), IL(SCp) ( max 400 s if VON > VON(SC) ) Tj =-40C: Tj =25C: Tj =+150C: Repetitive short circuit current limit IL(SCr) Tj = Tjt (see timing diagrams, page 10) Short circuit shutdown delay after input pos. slope VON > VON(SC), Tj =-40..+150C: td(SC) min value valid only, if input "low" time exceeds 30 s --7 6 80 -21 -10 -- 35 ---400 A A s V V C K J Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL), IL= 30 mA Short circuit shutdown detection voltage (pin 3 to 5) Thermal overload trip temperature Thermal hysteresis Inductive load switch-off energy dissipation 9), Tj Start = 150 C, single pulse Vbb = 12 V: Vbb = 24 V: Reverse battery (pin 3 to 1) 10) Integrated resistor in V bb line Diagnostic Characteristics Open load detection current (on-condition) VON(CL) VON(SC) Tjt Tjt EAS ELoad12 ELoad24 -Vbb Rbb --150 --- 58 8.3 -10 -- ----1.7 1.3 1.0 32 -- --- -120 V Tj=-40 C: IL (OL) Tj=25..150C: 2 2 --- 900 750 mA 8) 9) Short circuit current limit for max. duration of 400 s, prior to shutdown (see td(SC) page 4) While demagnetizing load inductance, dissipated energy in PROFET is EAS= VON(CL) * iL(t) dt, approx. VON(CL) 2 EAS= 1/2 * L * IL * ( ), see diagram page 8 VON(CL) - Vbb 10) Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load. Reverse current IGND of 0.3 A at Vbb= -32 V through the logic heats up the device. Time allowed under these condition is dependent on the size of the heatsink. Reverse IGND can be reduced by an additional external GND-resistor (150 ). Input and Status currents have to be limited (see max. ratings page 2 and circuit page 7). Semiconductor Group Page 4 1999-Mar.-22 BTS 432 F2 Parameter and Conditions at Tj = 25 C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Input and Status Feedback11) Input turn-on threshold voltage Tj =-40..+150C: Input turn-off threshold voltage VIN(T+) VIN(T-) VIN(T) IIN(off) 1.5 1.0 -1 10 80 350 --0.5 -25 200 -- 2.4 --30 50 400 1600 V V V A A s s Tj =-40..+150C: Input threshold hysteresis Off state input current (pin 2) On state input current (pin 2) VIN = 0.4 V: VIN = 3.5 V: IIN(on) td(ST SC) td(ST) Status invalid after positive input slope (short circuit) Tj=-40 ... +150C: Status invalid after positive input slope (open load) Tj=-40 ... +150C: Status output (open drain) Zener limit voltage Tj =-40...+150C, IST = +1.6 mA: ST low voltage Tj =-40...+150C, IST = +1.6 mA: VST(high) VST(low) 5.4 -- 6.1 -- -0.4 V 11) If a ground resistor RGND is used, add the voltage drop across this resistor. Semiconductor Group Page 5 1999-Mar.-22 BTS 432 F2 Truth Table Inputlevel Normal operation Open load Short circuit to GND Short circuit to Vbb Overtemperature Undervoltage Overvoltage L = "Low" Level H = "High" Level L H L H L H L H L H L H L H Output level L H 12) Status 432 D2 H H H L H L H H (L13)) L L L14) L14) L L 432 E2/F2 H H H L H L H H (L13)) L L H H H H 432 I2 H H L H H L L H L L L14) L14) L L H L L H H L L L L L L Terms Ibb I IN 2 I ST V V bb R IN VST 4 ST GND 1 GND IGND VOUT IN 3 Vbb IL PROFET OUT 5 VON Status output +5V R ST(ON) ST GND ESDZD ESD-Zener diode: 6.1 V typ., max 5 mA; RST(ON) < 250 at 1.6 mA, ESD zener diodes are not designed for continuous current Input circuit (ESD protection) R IN I Short Circuit detection Fault Condition: VON > 8.3 V typ.; IN high + V bb ESDZDI1 ZDI2 GND I I V ON OUT ZDI1 6.1 V typ., ESD zener diodes are not designed for continuous current Logic unit Short circuit detection 12) 13) 14) Power Transistor off, high impedance Low resistance short Vbb to output may be detected by no-load-detection No current sink capability during undervoltage shutdown Semiconductor Group Page 6 1999-Mar.-22 BTS 432 F2 Inductive and overvoltage output clamp + V bb V Z V ON GND disconnect 3 IN Vbb PROFET OUT 2 5 OUT GND 4 V bb V IN V ST ST GND 1 V GND VON clamped to 58 V typ. Overvolt. and reverse batt. protection + V bb Any kind of load. In case of Input=high is V OUT VIN - VIN(T+) . Due to VGND >0, no VST = low signal available. GND disconnect with GND pull up 3 IN Vbb PROFET 4 ST GND 1 OUT V R IN Z R bb IN Logic V 2 OUT R ST ST GND 5 PROFET R GND Signal GND Rbb = 120 typ., VZ +Rbb*40 mA = 67 V typ., add RGND, RIN, RST for extended protection V V bb V IN ST V GND Any kind of load. If V GND > VIN - VIN(T+) device stays off Due to VGND >0, no VST = low signal available. Open-load detection ON-state diagnostic condition: VON < RON * IL(OL); IN high + V bb Vbb disconnect with charged inductive load 3 high 2 IN Vbb PROFET 4 ST GND 1 V OUT ON VON 5 OUT Logic unit Open load detection bb 3 high 2 IN Vbb PROFET 4 ST GND 1 V OUT 5 bb Semiconductor Group Page 7 1999-Mar.-22 BTS 432 F2 Inductive Load switch-off energy dissipation E bb E AS Vbb PROFET OUT EL GND ER ELoad IN = ST Energy dissipated in PROFET EAS = Ebb + EL - ER. ELoad < EL, EL = 1/2 * L * I L 2 Semiconductor Group Page 8 1999-Mar.-22 BTS 432 F2 Options Overview all versions: High-side switch, Input protection, ESD protection, load dump and reverse battery protection , protection against loss of ground Type Logic version BTS 432D2 432E2 432F2 432I2 D X X X X X X E F X I X Overtemperature protection Tj >150 C, latch function 15)16) Tj >150 C, with auto-restart on cooling Short-circuit to GND protection switches off when VON>8.3 V typ.15) (when first turned on after approx. 200 s) Open load detection in OFF-state with sensing current 30 A typ. in ON-state with sensing voltage drop across power transistor X X X X X X -17) X X X X X X X X X X X -17) X X X X X X -17) X X X X X X X X X X Undervoltage shutdown with auto restart Overvoltage shutdown with auto restart Status feedback for overtemperature short circuit to GND short to Vbb open load undervoltage overvoltage Status output type CMOS Open drain Output negative voltage transient limit (fast inductive load switch off) to Vbb - VON(CL) X X X X X X X X Load current limit high level (can handle loads with high inrush currents) medium level low level (better protection of application) Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT 0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch between turn on and td(SC). 16) With latch function. Reseted by a) Input low, b) Undervoltage, c) Overvoltage 17) Low resistance short V to output may be detected by no-load-detection bb 15) Semiconductor Group Page 9 1999-Mar.-22 BTS 432 F2 Timing diagrams Figure 1a: Vbb turn on: Figure 3a: Turn on into short circuit, IN IN t d(bb IN) V bb ST V V OUT OUT td(SC) A ST open drain t A in case of too early V IN=high the device may not turn on (curve A) td(bb IN) approx. 150 s td(SC) approx. 200s if V bb - VOUT > 8.3 V typ. I L t Figure 3b: Turn on into overload, Figure 2a: Switching an inductive load IN IN td(ST) ST *) IL I L(SCp) I L(SCr) V OUT ST I L IL(OL) t *) if the time constant of load is too large, open-load-status may occur t Heating up may require several milliseconds , V bb - VOUT < 8.3 V typ. Semiconductor Group Page 10 1999-Mar.-22 BTS 432 F2 Figure 3c: Short circuit while on: Figure 5a: Open load: detection in ON-state, turn on/off to open load IN IN ST ST t d(ST) V OUT V OUT IL **) t I L open t **) current peak approx. 20 s Figure 4a: Overtemperature, Reset if (IN=low) and (Tj IN IN t d(ST OL1) ST ST t d(OL ST2) V V OUT OUT I T L J normal open normal t t td(ST OL1) = tbd s typ., t d(ST OL2) = tbd s typ *) ST goes high , when VIN=low and Tj Page 11 1999-Mar.-22 BTS 432 F2 Figure 6a: Undervoltage: Figure 7a: Overvoltage: IN IN V bb V bb(under) Vbb Vbb(u cp) V bb(u rst) V ON(CL) Vbb(over) V bb(o rst) V V OUT OUT ST open drain ST t t Figure 6b: Undervoltage restart of charge pump VON [V] V on VON(CL) off V off bb(over) V V V bb(u rst) bb(o rst) bb(u cp) V bb(under) on V bb Vbb [V] charge pump starts at Vbb(ucp) =6.5 V typ. Semiconductor Group Page 12 1999-Mar.-22 BTS 432 F2 Package and Ordering Code All dimensions in mm Standard TO-220AB/5 BTS 432 F2 Ordering code Q67060-S6203-A2 TO-220AB/5, Option E3043 Ordering code BTS 432 F2 E3043 Q67060-S6203-A4 SMD TO-220AB/5, Opt. E3062 Ordering code BTS432F2 E3062A T&R: Q67060-S6203-A6 Semiconductor Group Page 13 1999-Mar.-22 BTS 432 F2 Published by Siemens AG, Bereich Halbleiter Vetrieb, Werbung, Balanstrae 73, D-81541 Munchen (c) Siemens AG 1999. All Rights Reserved Attention please! As far as patents or other rights of third parties are concerned, liability is only assumed for components, not for applications, processes and circuits implemented within components or assemblies. The information describes a type of component and shall not be considered as warranted characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Semiconductor Group Offices in Germany or the Siemens Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer. Packing: Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorised for such purpose! Critical components18) of the Semiconductor Group of Siemens AG, may only be used in life supporting devices or systems 19) with the express written approval of the Semiconductor Group of Siemens AG. 18) A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 19) Life support devices or systems are intended (a) to be implanted in the human body or (b) support and/or maintain and sustain and/or protect human life. If they fail, it is reasonably to assume that the health of the user or other persons may be endangered. Semiconductor Group Page 14 1999-Mar.-22 |
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